TSFF5210 document number 81090 rev. 1.5, 28-nov-06 vishay semiconductors www.vishay.com 1 94 8 390 high speed infrared emitting diode, 870 nm, gaalas double hetero description TSFF5210 is a high speed infrared emitting diode in gaalas on gaalas double hetero (dh) technology, molded in a clear, untinted plastic package. dh technology combines high speed with high radiant power at wavelength of 870 nm. features ? high modulation bandwidth (23 mhz) ? extra high radiant power and radiant intensity ? low forward voltage ? suitable for high pulse current operation ? standard t-1? ( ? 5 mm) package ? angle of half intensity ? = 10 ? peak wavelength p = 870 nm ? high reliability ? good spectral matching to si photodetectors ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? infrared video data transmission between cam- corder and tv set. ? free air data transmission systems with high modulation frequencies or high data transmission rate requirements. absolute maximum ratings t amb = 25 c, unless otherwise specified e2 parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 250 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 sec, 2 mm from case t sd 260 c thermal resistance junction/ ambient r thja 300 k/w
www.vishay.com 2 document number 81090 rev. 1.5, 28-nov-06 TSFF5210 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v i f = 1 a, t p = 100 s v f 2.3 3.0 v temp. coefficient of v f i f = 100 ma tk vf - 2.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf parameter test condition symbol min ty p. max unit radiant intensity i f = 100 ma, t p = 20 ms i e 90 180 450 mw/sr i f = 1 a, t p = 100 s i e 1800 mw/sr radiant power i f = 100 ma, t p = 20 ms e 50 mw temp. coefficient of e i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 10 deg peak wavelength i f = 100 ma p 870 nm spectral bandwidth i f = 100 ma ? 40 nm temp. coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 15 ns fall time i f = 100 ma t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 23 mhz virtual source diameter ? 3.7 mm figure 1. power dissipatio n vs. ambient temperature 0 50 100 150 200 250 300 10 20 30 40 50 60 70 8 090 0 100 t am b - am b ient temperat u re (c) 16647 p v - po w er dissipation (m w ) r thja figure 2. forward current vs. ambient temperature 0 25 50 75 100 125 150 175 200 10 20 30 40 50 60 70 8 090 0 100 t am b - am b ient temperat u re (c) 16964 i f - for w ard c u rrent (ma) r thja
TSFF5210 document number 81090 rev. 1.5, 28-nov-06 vishay semiconductors www.vishay.com 3 figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage figure 5. radiant intens ity vs. forward current 100 1000 0.01 0.1 1.0 10 100 t p - p u lse d u ration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t am b < 50 i f - for w ard c u rrent (ma) 1 88 73 i f - for w ard c u rrent (ma) 1000 100 10 1 v f - for w ard v oltage ( v ) 024 t p = 100 s t p /t = 0.001 13 0.1 1 10 100 1000 1 10 100 1000 16032 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) figure 6. relative radiant power vs. wavelength figure 7. relative radiant intensity vs. angular displacement figure 8. attenuation vs. frequency 7 8 0 88 0 - w a v elength (nm) 9 8 0 95 9 88 6 0 0.25 0.5 0.75 1.0 1.25 - relati v e radiant po w er e, rel 0.4 0.2 0 0.2 0.4 i e rel - relati v e radiant intensity 0.6 159 8 9 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 - 5 - 4 - 3 - 2 - 1 0 1 10 100 1000 10000 100000 f - fre qu ency (khz) 14256 - atten u ation (db) i fdc = 70 ma i fac = 30 ma pp i e, e
www.vishay.com 4 document number 81090 rev. 1.5, 28-nov-06 TSFF5210 vishay semiconductors package dimensions in mm 15909
TSFF5210 document number 81090 rev. 1.5, 28-nov-06 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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